KTC3875 Y(120-240)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR (NPN) FEATURES · High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 150 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 60V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE DC current gain VCE= 6V, IC= 2mA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA fT Transition frequency 70 700 0.1 VCE=10V, IC= 1mA 0.25 V 1 V 80 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 2.0 3.5 pF Noise figure NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ 1.0 10 dB CLASSIFICATION OF hFE Rank Range Marking O Y GR BL 70-140 120-240 200-400 350-700 ALO ALY ALG ALL B,Nov,2013 Typical Characteristics Static Characteristic COLLECTOR CURRENT o 7uA IC (mA) 8uA 3.0 VCE= 6V COMMON EMITTER Ta=25℃ 9uA 2.5 6uA 2.0 5uA 4uA 1.5 3uA 1.0 hFE 10uA 3.5 600 400 Ta=100 C o Ta=25 C 200 2uA 0.5 IB=1uA 0.0 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 10 10 COLLECTOR CURRENT VCEsat —— 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 800 1 (V) VBEsat —— IC 1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) hFE —— IC 800 DC CURRENT GAIN 4.0 KTC3875 Ta=25℃ 600 Ta=100℃ 400 IC 100 (mA) 150 IC β=10 150 100 Ta=100℃ 50 Ta=25℃ 200 0.1 1 10 COLLECTOR CURRENT 0 0.1 100 150 IC IC—— VBE COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) o Ta=100 C COLLECTOR CURRENT Pc 200 10 Ta=25℃ 1 100 150 10 COLLECTOR CURRENT 150 100 —— IC (mA) Ta 175 150 125 100 75 50 25 VCE=6V 0.1 300 1 (mA) 0 400 500 600 700 BASE-EMITTER VOLTAGE 800 VBE(mV) 900 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) B,Nov,2013